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Overview of BDTI Conditions for Characterization of Licensable Silicon IP
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Overview of BDTI Conditions for Characterization of Licensable Silicon IP


The clock speed, die area, and power consumption of a licensable IP core depend on many conditions. For example, these characteristics are highly dependant on the selection of fabrication process, cell library, and operating voltage and temperature. As a result, it is difficult to compare licensable IP cores to one another unless the same set of conditions is applied to all.

In recognition of this fact, BDTI specifies a set of uniform conditions that vendors must use when reporting the characteristics for a licensable IP core. These conditions are specified for 130 nm and 90 nm process nodes, for each of the BDTI benchmark suites. They ensure that, for a particular process node, all results use the same fabrication process, and that reported speed, area, and power metrics for all cores are obtained in the same way. By applying these uniform conditions, BDTI enables fair comparisons of licensable IP cores using BDTI-certified benchmark results.

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